Hydrogen sensing characteristics of Pd/SiO₂-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodesCHOU, Po-Cheng; CHEN, Huey-Ing; LIU, I.-Ping et al.International journal of hydrogen energy. 2014, Vol 39, Num 35, pp 20313-20318, issn 0360-3199, 6 p.Article

Transport and magneto-transport characteristics of Fe₃O₄/GaAs hybrid structureHASSAN, Sameh S. A; XU, Y. B; AHMAD, Ehsan et al.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2875-2877, issn 0018-9464, 3 p.Conference Paper

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant SegregationJUN LUO; ZHANG, Shi-Li; QIU, Zhi-Jun et al.IEEE electron device letters. 2009, Vol 30, Num 6, pp 608-610, issn 0741-3106, 3 p.Article

Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfacesYANG LI; WEI LONG; TUNG, Raymond T et al.Applied surface science. 2013, Vol 284, pp 720-725, issn 0169-4332, 6 p.Article

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GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layerCHUAH, L. S; HASSAN, Z; ABU HASSAN, H et al.Journal of alloys and compounds. 2009, Vol 481, Num 1-2, issn 0925-8388, L15-L19Article

Temperature dependence of current-voltage characteristics of Sn/p-Si Schottky contactsAYDIN, M. E; GÜLLÜ, O; YILDIRIM, N et al.Physica. B, Condensed matter. 2008, Vol 403, Num 1, pp 131-138, issn 0921-4526, 8 p.Article

Schottky barrier height systematics studied by partisan interlayerWEI LONG; YANG LI; TUNG, Raymond T et al.Thin solid films. 2014, Vol 557, pp 254-257, issn 0040-6090, 4 p.Conference Paper

Current―voltage temperature characteristics of Au/n-Ge (10 0) Schottky diodesCHAWANDA, Albert; MTANGI, Wilbert; AURET, Francois D et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, pp 1574-1577, issn 0921-4526, 4 p.Conference Paper

Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodepositionGÜLER, G; GÜLLÜ, O; BAKKALOGLU, O. F et al.Physica. B, Condensed matter. 2008, Vol 403, Num 13-16, pp 2211-2214, issn 0921-4526, 4 p.Article

Schottky diode based on porous GaN for hydrogen gas sensing applicationYAM, F. K; HASSAN, Z.Applied surface science. 2007, Vol 253, Num 24, pp 9525-9528, issn 0169-4332, 4 p.Article

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Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge ContactsYI TONG; BIN LIU; YA LIM, Phyllis Shi et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 773-775, issn 0741-3106, 3 p.Article

Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfacesPARUI, S; VAN DER PLOEG, J. R. R; RANA, K. G et al.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 10-11, pp 388-390, issn 1862-6254, 3 p.Article

Temperature variation of current-voltage characteristics of Au/Ni/n-GaN Schottky diodesDOGAN, S; DUMAN, S; GÜRBULAK, B et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 4, pp 646-651, issn 1386-9477, 6 p.Article

Cu contact on NiSi substrate with a Ta/TaN barrier stackMI ZHOU; YING ZHAO; WEI HUANG et al.Microelectronic engineering. 2008, Vol 85, Num 10, pp 2028-2031, issn 0167-9317, 4 p.Conference Paper

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First-Principles Studies of Metal (111)/ZnO{0001} InterfacesYUFENG DONG; BRILLSON, L. J.Journal of electronic materials. 2008, Vol 37, Num 5, pp 743-748, issn 0361-5235, 6 p.Article

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Comparison of electrical parameters of Zn/p-Si and Sn/p-Si Schottky barrier diodesKARATAS, S.Solid state communications. 2005, Vol 135, Num 8, pp 500-504, issn 0038-1098, 5 p.Article

Carrier transport mechanism of Se/n-type Si Schottky diodesJANARDHANAM, V; PARK, Yang-Kyu; AHN, Kwang-Soon et al.Journal of alloys and compounds. 2012, Vol 534, pp 37-41, issn 0925-8388, 5 p.Article

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